? semiconductor components industries, llc, 2013 august, 2013 ? rev. 12 1 publication order number: mjd41c/d mjd41c(npn), mjd42c(pnp) complementary power transistors dpak for surface mount applications designed for general purpose amplifier and low speed switching applications. features ? lead formed for surface mount applications in plastic sleeves (no suffix) ? straight lead version in plastic sleeves (?1? suffix) ? electrically similar to popular tip41 and tip42 series ? epoxy meets ul 94 v?0 @ 0.125 in ? njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings rating symbol max unit collector?emitter voltage v ceo 100 vdc collector?base voltage v cb 100 vdc emitter?base voltage v eb 5 vdc collector current ? continuous i c 6 adc collector current ? peak i cm 10 adc base current i b 2 adc total power dissipation @ t c = 25 c derate above 25 c p d 20 0.16 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 1.75 0.014 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c esd ? human body model hbm 3b v esd ? machine model mm c v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. silicon power transistors 6 amperes 100 volts, 20 watts ipak case 369d style 1 dpak case 369c style 1 marking diagrams a = assembly location y = year ww = work week j4xc = device code x = 1 or 2 g = pb?free package ayww j4xcg see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information ayww j4xcg http://onsemi.com dpak ipak complementary 1 base 3 emitter collector 2, 4 1 base 3 emitter collector 2, 4 1 2 3 4 1 2 3 4
mjd41c (npn), mjd42c (pnp) http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 6.25 c/w thermal resistance, junction?to?ambient (note 2) r ja 71.4 c/w 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector?emitter sustaining voltage (note 3) (i c = 30 madc, i b = 0) v ceo(sus) 100 ? vdc collector cutoff current (v ce = 60 vdc, i b = 0) i ceo ? 50 adc collector cutoff current (v ce = 100 vdc, v eb = 0) i ces ? 10 adc emitter cutoff current (v be = 5 vdc, i c = 0) i ebo ? 0.5 madc on characteristics (note 3) dc current gain (i c = 0.3 adc, v ce = 4 vdc) (i c = 3 adc, v ce = 4 vdc) h fe 30 15 ? 75 ? collector?emitter saturation voltage (i c = 6 adc, i b = 600 madc) v ce(sat) ? 1.5 vdc base?emitter on voltage (i c = 6 adc, v ce = 4 vdc) v be(on) ? 2 vdc dynamic characteristics current gain ? bandwidth product (note 4) (i c = 500 madc, v ce = 10 vdc, f test = 1 mhz) f t 3 ? mhz small?signal current gain (i c = 0.5 adc, v ce = 10 vdc, f = 1 khz) h fe 20 ? ? 3. pulse test: pulse width 300 s, duty cycle 2%. 4. f t = ? h fe ?? f test .
mjd41c (npn), mjd42c (pnp) http://onsemi.com 3 6 0.06 i c , collector current (amp) 0.2 0.4 4 20 7 500 h fe , dc current gain v ce = 2 v t j = 150 c 70 0.3 1 25 c -55 c 10 0.1 0.6 2 6 25 25 figure 1. power derating t, temperature ( c) 0 50 75 100 125 150 15 10 t c 5 20 p d , power dissipation (watts) figure 2. switching time test circuit i c , collector current (amp) 0.1 t, time (s) 5 3 2 1 t s 0.7 0.5 0.3 0.2 t f 2 i c , collector current (amp) t j = 25 c v cc = 30 v i c /i b = 10 t, time (s) 1 0.7 0.5 0.3 0.2 t r 0.1 0.07 0.05 0.03 t d @ v be(off) 5 v figure 3. dc current gain i c , collector current (amp) 1.2 0.8 v, voltage (volts) 2 1.6 0.4 0 v be(sat) @ i c /i b = 10 2.5 0 1.5 1 t a 0.5 2 300 200 100 50 30 5 0.02 0.06 0.2 0.4 4 1 0.1 0.6 2 6 t j = 25 c v cc = 30 v i c /i b = 10 i b1 = i b2 0.06 0.2 0.4 4 0.3 1 0.1 0.6 2 6 0.06 0.2 0.4 4 1 0.1 0.6 2 figure 4. turn?on time figure 5. ?on? voltages figure 6. turn?off time t j = 25 c v be @ v ce = 4 v v ce(sat) @ i c /i b = 10 +11 v 25 s 0 -9 v r b -4 v d 1 scope v cc +30 v r c t r , t f 10 ns duty cycle = 1% 51 r b and r c varied to obtain desired current levels d 1 must be fast recovery type, e.g.: msb5300 used above i b 100 ma msd6100 used below i b 100 ma reverse all polarities for pnp. 3 t c t a surface mount 0.07 0.05 typical characteristics
mjd41c (npn), mjd42c (pnp) http://onsemi.com 4 c, capacitance (pf) v ce , collector-emitter voltage (volts) t, time (ms) 0.01 0.01 0.05 1 2 5 10 20 50 100 200 500 0.1 0.5 0.2 100 0 0.03 0.3 3 30 300 0.02 2.5 a figure 7. collector saturation region i b , base current (ma) 1.2 0.4 0 10 2 0.8 t j = 25 c 1.6 i c = 1 a figure 8. capacitance v r , reverse voltage (volts) c ob 0.5 50 2 5 20 50 1 0.2 0.1 0.05 r(t), effective transient thermal r jc(t) = r(t) r jc r jc = 6.25 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2 0.2 single pulse resistance (normalized) figure 9. thermal response 0.5 d = 0.5 5 a 1000 500 300 200 100 50 30 20 300 30 70 100 200 1 3 10 30 0.05 0.3 0.7 0.07 0.03 0.02 0.1 0.02 0.01 t j = 25 c c ib i c , collector current (amp) 10 70 v ce , collector-emitter voltage (volts) 0.01 10 0 1 0.3 3 0.1 0.03 wire bond limit thermal limit second breakdown limit figure 10. maximum forward bias safe operating area t c = 25 c single pulse t j = 150 c dc 0.5 2 5 1ms mjd41c, 42c 50 30 20 10 7 5 3 2 1 0.05 100 s curves apply below rated v ceo 5ms 500 s there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c ? v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of figure 10 is based on t j(pk) = 150 c; t c is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided t j(pk) 150 c. t j(pk) may be calculated from the data in figure 9. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
mjd41c (npn), mjd42c (pnp) http://onsemi.com 5 ordering information device package type package shipping ? mjd41crlg dpak (pb?free) 369c 1,800 / tape & reel mjd41ct4g dpak (pb?free) 369c 2,500 / tape & reel njvmjd41ct4g* dpak (pb?free) 369c 2,500 / tape & reel mjd42cg dpak (pb?free) 369c 75 units / rail mjd42c1g ipak (pb?free) 369d 75 units / rail mjd42crlg dpak (pb?free) 369c 1,800 / tape & reel njvmjd42crlg* dpak (pb?free) 369c 1,800 / tape & reel mjd42ct4g dpak (pb?free) 369c 2,500 / tape & reel NJVMJD42CT4G* dpak (pb?free) 369c 2,500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d. *njv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable
mjd41c (npn), mjd42c (pnp) http://onsemi.com 6 package dimensions dpak (single gauge) case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw
mjd41c (npn), mjd42c (pnp) http://onsemi.com 7 package dimensions 123 4 v s a k ?t? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d issue c style 1: pin 1. base 2. collector 3. emitter 4. collector on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mjd41c/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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